Interference Phenomena of Silicon and Germanium Single Crystal Wafers by Infrared Spectrophotometry

Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting

Strain energy from the lattice mismatch of a heteroepitaxial system can create ‘‘self-assembled,’’ single-crystal islands irregularly arranged on the surface. Alternatively, features of tens of nanometers can be patterned on a substrate by ‘‘nanoimprinting’’ using a mold and etching. When these two techniques are combined, the small patterned features can interact with the self-assembly process...

Printable Single-Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Printable or solution processable semiconductor materials have attracted significant attention recently due to their potential to enable cost effective, non-vacuum based fabrication approaches for large area electronics, often referred to as macroelectronics, and particularly to systems that use low cost plastic substrates. Several classes of semiconducting small molecule and polymer materials ...

Deterministic assembly of releasable single crystal silicon-metal oxide field- effect devices formed from bulk wafers

Bulk quantities of single-crystal silicon micro-/nanoribbons generated from bulk wafers.

This Letter demonstrates a strategy for producing bulk quantities of high quality, dimensionally uniform single-crystal silicon micro- and nanoribbons from bulk silicon (111) wafers. The process uses etched trenches with controlled rippled structures defined on the sidewalls, together with angled evaporation of masking materials and anisotropic wet etching of the silicon, to produce multilayer ...

Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission

We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon-germanium alloy layers have negligible absorption at 1.3 and 1.55 pm over wide ranges of thickness, composition, and strain condition. The substantial improvement of ...